? semiconductor components industries, llc, 2012 august, 2012 ? rev. 1 1 publication order number: noa1212/d noa1212 ambient light sensor with dark current compensation description the noa1212 is a very low power ambient light sensor (als) with an analog current output and a power down mode to conserve power. designed primarily for handheld device applications, the active power dissipation of this chip is less than 8 a at dark and its quiescent current consumption is less than 200 pa in power down mode. the device can operate over a very wide range of voltages from 2 v to 5.5 v. the noa1212 employs proprietary cmos image sensing technology from on semiconductor, including built ? in dynamic dark current compensation to provide large signal to noise ratio (snr) and wide dynamic range (dr) over the entire operating temperature range. the photopic optical filter provides a light response similar to that of the human eye. together the photopic light response and dark current compensation insures accurate light level detection. features ? senses ambient light and provides an output current proportional to the ambient light intensity ? photopic spectral response ? dynamic dark current compensation ? three selectable output current gain modes in 10x steps ? power down mode ? less than 18 a at 100 lux active power consumption in medium gain mode (less than 8 a at dark) ? less than 200 pa quiescent power dissipation in power down mode at all light levels ? linear response over the full operating range ? senses intensity of ambient light from ~0 lux to over 100,000 lux ? wide operating voltage range (2 v to 5.5 v) ? wide operating temperature range ( ? 40 c to 85 c) ? drop ? in replacement device in 1.6 x 1.6 mm package ? these devices are pb ? free, halogen free/bfr free and are rohs compliant applications ? saves display power in applications such as: ? cell phones, pdas, mp3 players, gps ? cameras, video recorders ? mobile devices with displays or backlit keypads ? laptops, notebooks, digital signage ? lcd tvs and monitors, digital picture frames ? automobile dashboard displays and infotainment ? led indoor/outdoor residential and street lights figure 1. typical application circuit h photo diode amp gb2 gb1 iout r l vdd vss c l adc c1 1 vin = 2 to 5.5v ic1 noa1212 ic2 h photo diode amp gb2 gb1 iout gs2 r l vdd vss c l adc c1 1 vin = 2 to 5.5v ic1 noa1212 ic2 gs1 device package shipping ? ordering information NOA1212CUTAG* cudfn6 (pb ? free) 2500 / tape & reel cudfn6 cu suffix case 505ae http://onsemi.com pin assignment (top view) 1 2 3 6 5 4 vdd vss gb1 iout nc gb2 ?for information on tape and reel specifications, including part orientation and tape sizes, please refer to our t ape and reel packaging specifications brochure, brd8011/d. *temperature range: ? 40 c to 85 c. 1 6
noa1212 http://onsemi.com 2 h photo diode reference diode amp gb2 gb1 iout r l v out h photo diode reference diode amp gb2 gb1 iout gs2 r l v out figure 2. simplified block diagram gs1 table 1. pin function description pin pin name description 1 vdd power pin. 2 vss ground pin. 3 gb1 in conjunction with gb2, selects between three gain modes and power down. 4 gb2 in conjunction with gb1, selects between three gain modes and power down. 5 nc not connected. this may be connected to ground or left floating. 6 iout analog current output. ep vss exposed pad, internally connected to ground. should be connected to ground. table 2. absolute maximum ratings rating symbol value unit input power supply v dd 6 v input voltage range v in ? 0.3 to v dd + 0.3 v output voltage range v out ? 0.3 to v dd + 0.2 v output current range i o 0 to 15 ma maximum junction temperature t j(max) ? 40 to 85 c storage temperature t stg ? 40 to 85 c esd capability, human body model (note 1) esd hbm 2 kv esd capability, charged device model (note 1) esd cdm 750 v esd capability, machine model (note 1) esd mm 150 v moisture sensitivity level msl 5 ? lead temperature soldering (note 2) t sld 260 c stresses exceeding maximum ratings may damage the device. maximum ratings are stress ratings only. functional operation above t he recommended operating conditions is not implied. extended exposure to stresses above the recommended operating conditions may af fect device reliability. 1. this device incorporates esd protection and is tested by the following methods: esd human body model tested per eia/jesd22 ? a114 esd charged device model tested per esd ? stm5.3.1 ? 1999 esd machine model tested per eia/jesd22 ? a115 latchup current maximum rating: 100 ma per jedec standard: jesd78 2. for information, please refer to our soldering and mounting techniques reference manual, solderrm/d
noa1212 http://onsemi.com 3 table 3. electrical characteristics (unless otherwise specified, these specifications apply over vdd = 5.5 v, ? 40 c < t a < 85 c) rating test conditions symbol min typ max unit power supply voltage v dd 2 3.0 5.5 v power supply current v dd = 3.0 v, ev = 0 lux, h ? gain i dd_0 6 8 12 a power supply current v dd = 3.0 v, ev = 100 lux, h ? gain i dd_100 32 64 96 a power down current all light levels i dd_pd 0.2 5 na output current, high ? gain ev = 100 lux, white led i o_high 41 51 61.5 a dark output current, high ? gain v dd = 3.0 v, ev = 0 lux i o_dark 10 na wavelength of maximum response m 540 nm white led/fluorescent current ratio ev = 100 lux r le 1.0 incandescent/fluorescent current ratio ev = 100 lux r if 1.45 maximum output voltage ev = 100 lux, r l = 220 k , h ? gain v omax v dd ?0.4 v dd ?0.1 v dd v power down time ev = 100 lux, h ? gain to pd t pd 1.5 ms wake up time ev = 100 lux, pd to h ? gain t wu 300 s low level input voltage v il ? 0.2 0.25 v dd v high level input voltage v ih 0.75 v dd v dd +0.2 v operating free ? air temperature range t a ? 40 85 c
noa1212 http://onsemi.com 4 typical characteristics figure 3. spectral response (normalized) figure 4. light source dependency (normalized to fluorescent light) figure 5. output current vs. ev figure 6. output current vs. ev (high gain mode) figure 7. output current vs. ev, 0 ? 1000 lux (high gain mode) figure 8. output current vs. ev, 0 ? 100 lux (high gain mode) 0 0.5 1 1.5 2 incandescent (2850k) fluorescent (2700k) white led (5600k) fluorescent (5000k) ratio wavelength (nm) 0.5 200 300 400 500 600 700 800 900 1000 als human eye 0.4 0.3 0.2 0.1 0 0.8 0.6 0.7 1.0 0.9 output current (normalized) ev (lux) 1 0.01 0.1 1 10 100 1000 10000 100000 1000000 high gain medium gain low gain 0.1 0.01 0.001 0.0001 0.00001 1000 10 100 10000 output current ( a) v dd = 3.3 v ev (lux) 1 1 10 100 1000 10000 100000 no load 1 k load 10 k load 100 k load 1000 10 100 10000 output current ( a) v dd = 3.3 v ev (lux) output current ( a) 500 0 200 400 600 800 1000 white led (5600k) 400 300 200 100 0 600 ev (lux) output current ( a) 50 0 20 40 60 80 100 white led (5600k) 40 30 20 10 0 60
noa1212 http://onsemi.com 5 typical characteristics figure 9. output current vs. angle (end view, normalized) figure 10. output current vs. angle (side view, normalized) figure 11. output current at 0 lux vs. temperature (high gain mode) figure 12. output current at 100 lux vs. temperature figure 13. supply current at 0 lux vs. temperature (high gain mode) figure 14. supply current at 100 lux vs. temperature (high gain mode) temperature ( c) output current (na) 2.5 ? 60 ? 40 ? 20 0 20 40 60 80 100 v dd = 3.3 v 2.0 1.5 1.0 0.5 0.0 3.0 temperature ( c) output current (normalized to 20c) 1.0 ? 60 ? 40 ? 20 0 20 40 60 80 100 v dd = 3.3 v 0.8 0.6 0.4 0.2 0.0 1.6 1.2 1.4 high gain mode medium gain mode low gain mode temperature ( c) i dd ( a) 5 ? 60 ? 40 ? 20 0 20 40 60 80 100 v dd = 3.3 v 4 3 2 1 0 8 6 7 10 9 temperature ( c) i dd ( a) 50 ? 60 ? 40 ? 20 0 20 40 60 80 100 v dd = 3.3 v 40 30 20 10 0 80 60 70 100 90 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 0 10 20 30 40 50 60 70 80 90 100 110 120 130 140 150 160 170 180 ? 170 ? 160 ? 150 ? 140 ? 130 ? 120 ? 110 ? 100 ? 90 ? 80 ? 70 ? 60 ? 50 ? 40 ? 30 ? 20 ? 10 end view 1 2 3 6 5 4 top view ? 90 o 90 o 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 0 10 20 30 40 50 60 70 80 90 100 110 120 130 140 150 160 170 180 ? 170 ? 160 ? 150 ? 140 ? 130 ? 120 ? 110 ? 100 ? 90 ? 80 ? 70 ? 60 ? 50 ? 40 ? 30 ? 20 ? 10 side view top view 1 2 3 6 5 4 ? 90 o 90 o
noa1212 http://onsemi.com 6 typical characteristics figure 15. output current at 100 lux vs. supply voltage (high gain mode) figure 16. supply current vs. ev (high gain mode) figure 17. supply current vs. supply voltage (high gain mode) v dd (v) output current (normalized) 1.0 0123456 0.8 0.6 0.4 0.2 0.0 1.6 1.2 lux (ev) supply current ( a) 500 0 200 400 600 800 1000 white led (5600k) 400 300 200 100 0 800 600 700 1.4 v dd (v) supply current ( a) 50 0123456 40 30 20 10 0 60 80 70
noa1212 http://onsemi.com 7 description of operation ambient light sensor architecture the noa1212 employs a sensitive photo diode fabricated in on semiconductor?s standard cmos process technology. the major components of this sensor are as shown in figure 2 . the photons which are to be detected pass through an on semiconductor proprietary color filter limiting extraneous photons and thus performing as a band pass filter on the incident wave front. the filter only transmits photons in the visible spectrum which are primarily detected by the human eye and exhibits excellent ir rejection. the photo response of this sensor is as shown in figure 3. the ambient light signal detected by the photo diode is converted to an analog output current by an amplifier with programmable gain. table 4 shows the gain setting and the corresponding light sensitivity. table 4. programmable gain settings gb2 gb1 mode approximate output current @ 100 lux approximate output current @ 1000 lux saturation 0 0 power down ? ? ? 0 1 high gain 51 a 510 a ~10,000 lux 1 0 medium gain 5.1 a 51 a ~100,000 lux 1 1 low gain 0.51 a 5.1 a > 100,000 lux power down mode this device can be placed in a power down mode by setting gb1 and gb2 to logic low level. in order for proper operation of this mode gb1 and gb2 should stay low 1.5 ms. external component selection the noa1212 outputs a current in direct response to the incident illumination. in many applications it is desirable to convert the output current into voltage. it may also be desirable to filter the ef fects of 50/60 hz flicker or other light source transients. conversion from current to voltage may be accomplished by adding load resistor r l to the output. the value of r l is bounded on the high side by the potential output saturation of the amplifier at high ambient light levels. r l is bounded on the low side by the output current limiting of the internal amplifier and to minimize power consumption. equation 1 describes the relationship of light input to current output for the high ? gain mode. i out 51 a 100 lux *e v (eq. 1) by adding r l to the output, i out is converted into a voltage according to equation 2. v out i out *r l 51 a 100 lux *e v *r l (eq. 2) the range of the output voltage is limited by the output stage to the v omax parameter value of v dd ? 0.4 v at the maximum desired e v as shown in equation 3. equation 4 computes the value for r l (high ? gain mode). v omax 51 a 100 lux *e vmax *r l (eq. 3) r l v dd 0.4 v e vmax * 100 lux 51 a (eq. 4) for example, consider a 5 v supply with a desired e vmax = 1000 lux, the value of r l would be 8.85 k . the value for r l can easily be computed for different noa1212 gain ranges by substituting the appropriate output current at 100 lux from table 4. the optional capacitor c l can be used to form a low ? pass filter to remove 50/60 hz filter or other unwanted noise sources as computed with equation 5. c l 1 2 f c r l (eq. 5) for our example, to filter out 60hz flicker the value of c l would be 300 nf. power supply bypassing and printed circuit board design power supply bypass and decoupling can typically be handled with a low cost 0.1 f to 1.0 f capacitor. the exposed pad on the bottom of the package is internally connected to vss pin 2 and should be soldered to the printed circuit board.
noa1212 http://onsemi.com 8 package dimensions cudfn6, 1.6x1.6 case 505ae issue b notes: 1. dimensioning and tolerancing per asme y14.5m, 1994. 2. controlling dimension: millimeters. 3. dimension b applies to plated terminal and is measured between 0.15 and 0.30mm from the terminal tip. 4. coplanarity applies to the exposed pad as well as the terminals. seating plane d e 0.10 c a3 2x 2x 0.10 c dim max millimeters 0.05 c 0.08 c a 0.10 c note 3 l e d2 e2 b b 3 6 6x 1 k 4 6x 0.05 c bottom view mounting footprint dimensions: millimeters *for additional information on our pb ? free strategy and soldering details, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d. a b top view a a1 detail a c side view note 4 detail a end view d a a1 b e2 d d2 e k e l a3 min 0.55 0.00 0.15 0.40 1.00 0.20 0.25 4 0.65 0.05 0.25 0.60 1.20 --- 0.35 0.20 ref 10 1.60 bsc 1.60 bsc 0.50 bsc 6x 0.52 0.50 pitch 1.20 1.90 6x 0.25 0.60 1 13 64 a m 0.10 b c m m a m 0.10 b c d --- 0.10 on semiconductor and are registered trademarks of semiconductor co mponents industries, llc (scillc). scillc owns the rights to a numb er of patents, trademarks, copyrights, trade secrets, and other intellectual property. a list ing of scillc?s product/patent coverage may be accessed at ww w.onsemi.com/site/pdf/patent ? marking.pdf. scillc reserves the right to make changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and s pecifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ?typical? parameters which may be provided in scillc data sheets and/ or specifications can and do vary in different applications and actual performance may vary over time. all operating parame ters, including ?typicals? must be validated for each customer application by customer?s technical experts. scillc does not convey any license under its patent rights nor the right s of others. scillc products are not designed, intended, or a uthorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in whic h the failure of the scillc product could create a situation where personal injury or death may occur. should buyer purchase or us e scillc products for any such unintended or unauthorized appli cation, buyer shall indemnify and hold scillc and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unin tended or unauthorized use, even if such claim alleges that scil lc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyrig ht laws and is not for resale in any manner. publication ordering information n. american technical support : 800 ? 282 ? 9855 toll free usa/canada europe, middle east and africa technical support: phone: 421 33 790 2910 japan customer focus center phone: 81 ? 3 ? 5817 ? 1050 noa1212/d literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 303 ? 675 ? 2175 or 800 ? 344 ? 3860 toll free usa/canada fax : 303 ? 675 ? 2176 or 800 ? 344 ? 3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : www.onsemi.com order literature : http://www.onsemi.com/orderlit for additional information, please contact your local sales representative
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